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Physical etching technique used to pattern thin film layers
- Partner:Imperial College London
- Facility:Thin Film Technology Laboratory
- Availability:Available
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Detailed Description
This is a physical etching technique used to pattern thin film layers. Ions of inert gas (e.g. Ar) with controlled energy are extracted from RF generated plasma to form a wide beam. The ion beam is further accelerated and neutralised before interacting with the sample, which is anchored on a water-cooled holder with rotation and tilting abilities. The ion milling system enables the top-down fabrication of devices and patterned structures. In conjunction with various lithography techniques available in the lab, the ion miller allows a range of materials to be patterned on a micro- and nano-scale.
Uses/Applications
Top-down fabrication of devices and patterned structures. Patterning materials on a micro- and nano-scale.