Ion milling system (wide beam)

This is a physical etching technique used to pattern thin film layers. Ions of inert gas (e.g. Ar) with controlled energy are extracted from RF generated plasma to form a wide beam. The ion beam is further accelerated and neutralised before interacting with the sample, which is anchored on a water-cooled holder with rotation and tilting abilities. The ion milling system enables the top-down fabrication of devices and patterned structures. In conjunction with various lithography techniques available in the lab, the ion miller allows a range of materials to be patterned on a micro- and nano-scale.