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The Ultra High Vacuum (UHV) deposition system comprises two interconnected UHV deposition chambers for molecular beam epitaxy (MBE) and for thermal or electron beam evaporation.
- Partner:University of Cambridge
- Facility:Cavendish Laboratory
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Detailed Description
The MBE system is ideal for the epitaxial growth of topological insulators and related materials, and the thermal and electron beam evaporator is for the deposition of a range of metals.
Uses/Applications
The flexible MBE system is capable of the well- controlled growth of high-purity epitaxial layers and heterostructures covering a wide range of different compounds with unusual properties, such as topological insulators and thermoelectrics.
These materials include those which have already been identified as topological insulators such as Bi2Te3 and Sb2Te3, as well as other materials of interest.
The first chamber is a molecular beam epitaxy (MBE) system for the epitaxial growth of topological insulators and related materials, and the second is a thermal and electron beam evaporator for the deposition of a range of metals.
After growth of epitaxial layers in the MBE system, samples can be transferred under contamination-free UHV conditions to the evaporator for deposition of capping layers.
The evaporator chamber has several different sources using both thermal and electron beam evaporation techniques, to deposit a range of metals onto samples transferred from the MBE system.
This UHV evaporator can also be used independently to provide high-purity materials suitable for spintronics and superconducting device research.