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ToF-SIMS is an advanced label-free technique for the atomic and molecular characterisation and imaging of a broad range of materials in 2D and 3D.
- Partner:The University of Manchester
- Facility:Photon Science Institute
Or call us now on 0161 275 8382
Detailed Description
ToF-SIMS is an advanced label-free technique for the atomic and molecular characterisation and imaging of a broad range of materials in 2D and 3D. Material is sputtered from a sample surface at the molecular level by a scanning high-energy ion beam and subjected to simultaneous chemical and positional analysis by advanced mass spectrometry. These capabilities are highly complementary to NanoSIMS, XPS and electron microscopy.
Uses/Applications
ToF-SIMS analysis has delivered major advances in diverse fields such as biomaterials, energy storage, catalysis, nanotechnology and organic electronics. For example a full chemical 3D image to 20 micron depth in a solid-state battery electrode can be obtained, revealing the chemistry of defects and buried interfaces. Biomolecular distributions in cells and tissue scaffolds can be imaged in a parallel manner to determine cellular interactions and aid understanding of biocompatibility.