Description
The high stability and precisely controlled stage is capable of cutting slice thicknesses down to 5 nm, which, combined with low voltage imaging, improves Z resolution. Both SE and BSE images can be captured and reconstructed. A series of stacked BSE images can qualitatively highlight the atomic number difference in the analysed volume. An integrated EDS system is capable of semi-quantitative elemental analysis of the same volume.
Uses / Applications
This system is best suited to soft materials such as biological samples, polymers, aluminium and magnesium.
Accelerating voltage
200 V to 30 kV
Probe current
up to 2 μA
High vacuum mode (6e-4 Pa)
1.0 nm at 30 kV (SE)
3.0 nm at 1 kV (SE)
Low vacuum mode (10 to 130 Pa)
1.4 nm at 30 kV (BSE)
3.0 nm at 3 kV (SE)
Knife travel distance
1.2 mm
Z travel distance
600 um
Stage travel distance X-Y
±700 um
Cut thickness
5- 200 nm
Cutting speed
0.1-1.2 mm/sec
Image resolution
8k x 8k
EDX detector
X-Max 80 (Silicon Drift Detector)
