Description
The Sc-1 combines PVD and ALD in one vacuum chamber. This allows for the deposition of multilayers without having to move the substrate between layers, leading to greater control over film purity (no need to break vacuum), and greater ease in ensuring consistency between layers (e.g., positioning of substrate relative to the sources) than through using multi-chambered systems, or through using multiple machines.
By combining PVD and ALD in one system it is possible to develop new multilayer systems with applications in economically and scientifically important areas aligning with the Royce strategic objectives including the hydrogen economy (e.g., permeation barriers), battery research (e.g., solid state electrolytes), and thin film solar cells (Transition to zero carbon), as well as for optics and quantum technologies (photonic structures), and semiconductor devices (digital transformation).
Specification
4 to 8 inch wafers Temperature Gradient Stage (30°C to 450°C, and 400°C homogenous) High Temperature (max. 900°C) Rotational and z-stages with bias Loading Loading from the top via interchangeable substrate holders Custom-made frame holders for 3D parts Cleanroom and Glovebox compatible ALD Precursors Up to 500°C Precursors Up to 8 gas sources with 6 individual inlets Ozone option Microwave plasma sources for PE-ALD PVD Sputtering Sources 1 to 4 inch targets Different power supplies: DC, RF, HiPIMS. Single layers and multinanolayers of: Al₂O₃, ZnO, SiO₂, TiO₂, Y₂O₃, ZrO₂, HfO₂, Cu, Al, Ti, Mg, Nb, Li, and more…
