Description
- MBE chamber for growth of topological materials
- Hybrid metal-organics chamber with K-cells, e-beam evaporation and magnetron sputtering
- Sputtering chamber for dc/rf magnetron sputtering of metals and oxides
- PLD chamber with a 248nm laser for growth of complex oxides
- In situ RHEED for monitoring epitaxial growth
- Load-locks for fast sample turn-around
- Preparation chamber with substrate heater and ion miller
- UHV transfer between chambers.
Uses / Applications
The four deposition chamber are:
**Topological Insulator Molecular Beam Epitaxy**
• MBE for topological insulator thin film deposition;
• Four dual-filament effusion cells (Ge, Bi, Se, Sn);
• Low temperature effusion cell (In);
• High-temperature effusion cell (Fe);
• Two valved-corrosive-metal-cracker-cells (Sb, Te);
• In-situ RHEED to monitor epitaxial growth;.
• Substrate temperature range 20°C to 1000°C.
**Organics Molecular Beam Epitaxy**
• Four low temperature effusion cells for evaporation of organic molecules (e.g. C60, MnPc, H2Pc);
• Four pocket e-beam evaporation system (e.g. Pt, Co, Au, Py);
• DC/RF magnetron sputtering source (e.g. Nb, Cu)
• Substrate temperature range -100°C to 1000°C.
**Pulsed Laser Deposition**
• Multi-target stage for growth of complex oxide multilayers (e.g. BiFeO3, SrTiO3, SrRuO3);
• Kr-F, 248 nm pulsed laser;
• In-situ RHEED;.
• Substrate temperature range 20°C to 900°C;
• Substrate sizes are limited to 10 x 10 mm.
**Sputtering**
• Seven confocal DC/RF-magnetron sputter sources (e.g. Ta, Nb, Al, Ru, Cu, Pt, Co, CoB, CoFeB, Ni);
• Off-axis sputter source for low-energy deposition (e.g. YIG);
• Multiple process gases: argon, oxygen and nitrogen;
• Substrate temperature range -100°C to 1000°C.
