Hard X-ray Photoelectron Spectroscopy (HAXPES)

(Available Spring 2019)

The Hard X-ray Photoelectron Spectroscopy allows for the non-destructive measurement of the bulk chemical & electronic environment and depth-profiling from the surface into the bulk of a material up to depths ~ 100 nm. Until now only available at synchrotron radiation sources (such as I09 beamline at Diamond LS) – this has been made possible by new technologies in lab-based hard x-ray sources with 1000 times more flux.

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Description

HAXPES provides unique characterisation of a wide range of materials systems including:

Buried interfaces, such as active electronic layers below a surface capping layer
Depth-profiling through heterostructures and e.g. layered low-dimension materials
Probing of dopants and contaminants in the bulk of a material
Many interfaces such as thin films on a substrate