This is a combined system that consists of a Physical Vapour Deposition (PVD) (thermal evaporation) chamber which is used for the deposition of copper thin films, and a vertical Chemical Vapour Deposition (CVD) system used for graphene deposition. Both chambers are connected with a common load-lock that allows the deposition of high-quality graphene on 4” Si wafers. A copper thin film is deposited on a 4” wafer which is then transferred (without breaking the vacuum) to the CVD reactor for consequent graphene growth.
The CVD reactor benefits also from a RF plasma source to pre-crack the reacting gas molecules.
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