Electron beam lithography uses a focused fine electron beam to scan a pattern specifically designed across a substrate surface covered with a film of resist/ Depending on the polarity, resist in exposed areas of electron beam scan will either be removed or remain after the developing process. Electron beam lithography can create nanometer scale structures in the resist that can subsequently be transferred to the substrate material. Subsequent etching or growing materials are often processed to create nano structures. The Raith 50 electron beam lithography has a sub 100nm line width resolution with direct write capability on 2” sample and run at a highest energy level at 30keV.
Electron beam lithography uses a focused fine electron beam to scan a pattern specifically designed across a substrate surface covered with a film of resist.
The equipment can be used for flexible configuration to fit application requirements and is an essential manufacturing tool for fabrication of deep nanoscale devices. The system contributes to developing novel nanoelectronic devices, on-chip integrated optoelectronic circuits, quantum devices, layered material related devices, photonic and plasmonic systems. It allows both the cutting edge fabrication of small scale (lab level) and expanding these capabilities towards a large scale production. It makes a bridge between the university research activities and the wafer scale manufacturing and developing new technologies and contributes to cross disciplinary research that can impact manufacturing business in the future.
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