Description
Maskless photolithography eliminates the need for a photomask: The system exposes the pattern directly onto the resist-covered surface. Design modifications are implemented by changing the CAD layout. Maximum substrate size: 6” x 6”, substrate thickness: 0.1 to 6 mm. Minimum feature 1 um in S1805. Alignment overlay < 500 nm (three sigma), linewidth variation < 120 nm (three sigma). Basic greyscale mode.
Uses / Applications
Exposing an area of 100 x 100 mm² will take approximately 30 minutes (dose of 50 mJ/cm2). The application areas of the MLA include life sciences, MEMS, micro-optics, semiconductors, sensors, actuators, MOEMS, material research, nano-tubes, and graphene.