Description
The system has an interferometer-controlled stage which allows for the possibility of writing nanoscale patterns across large substrates with a stitching accuracy between writing fields better than 15 nm. The electron beam is generated by a ZrO/W emitter and is focussed via a four-stage electron lens system.
Specification
Beam current: 100 pA – 40 nA
Acceleration voltage: 25 kV – 50 kV
