Description
ICP-RIE is a versatile and highly efficient plasma etching technique. Independent control of plasma density through the ICP source means high density plasmas can be realised without increasing DC bias on the lower electrode. High etch rates, increased selectivity to mask, improved ion directionality and low device damage are all realised using this technique. Robust auto matching across a wide parameter range means that processes are repeatable and reliable ensuring high performance every run, every day.
